solid state physics | Scholarship for Nigerians and Africans

PhD Position – Thermal Effects in 3D Integrated Circuits, France

The fellowship will be grated throughout the duration of the work, which will take place in a highly dynamic and international field in Grenoble (France).
The high requirements on today’s mobile systems push them beyond the limit of a simple communication tool, and make them reminiscent of a
global assistance terminal that includes entertainment, office and general services. This translates into a continuous increase in terms
of required computational performance. The scaling ability of complementary metal-oxide-semiconductor (CMOS) technology offers one
possible way to increase the system performance. However, it comes with a high cost in terms of fabrication complexity and power
efficiency. Another alternative that addresses these hurdles consists of vertically staking electronic chips on top of each other using
vertical connections (Fig. 1) called the through-silicon vias (TSV), thus increasing the computational performance, while using the same
system footprint.

Key competences:

– Knowledge in the field of classical thermal physics
– Understanding of solid-state physics and MOS transistors
– Ability to carry out physical modelling and numerical simulations
using a finite element simulator
– Ability to carry out electrical test and characterization and to
develop automated data input and processing tools
– Basic understanding of CMOS circuits and logic systems
– Ability to design basic logic circuits or ability to develop this competence
– Required team work within the frame of numerous collaborations with the involved teams
– Excellent time management skills
– Creativity, self-motivation, personal engagement
– Very good academic grade

Scholarship Application Deadline: Contact Employer, haykel.ben-jamaa-at-cea.fr

Further Scholarship Information and Application

PhD Position – Thermal Effects in 3D Integrated Circuits, France

The fellowship will be grated throughout the duration of the work, which will take place in a highly dynamic and international field in Grenoble (France).
The high requirements on today’s mobile systems push them beyond the limit of a simple communication tool, and make them reminiscent of a
global assistance terminal that includes entertainment, office and general services. This translates into a continuous increase in terms
of required computational performance. The scaling ability of complementary metal-oxide-semiconductor (CMOS) technology offers one
possible way to increase the system performance. However, it comes with a high cost in terms of fabrication complexity and power
efficiency. Another alternative that addresses these hurdles consists of vertically staking electronic chips on top of each other using
vertical connections (Fig. 1) called the through-silicon vias (TSV), thus increasing the computational performance, while using the same
system footprint.

Key competences:

– Knowledge in the field of classical thermal physics
– Understanding of solid-state physics and MOS transistors
– Ability to carry out physical modelling and numerical simulations
using a finite element simulator
– Ability to carry out electrical test and characterization and to
develop automated data input and processing tools
– Basic understanding of CMOS circuits and logic systems
– Ability to design basic logic circuits or ability to develop this competence
– Required team work within the frame of numerous collaborations with the involved teams
– Excellent time management skills
– Creativity, self-motivation, personal engagement
– Very good academic grade

Scholarship Application Deadline: Contact Employer, haykel.ben-jamaa-at-cea.fr

Further Scholarship Information and Application

PhD Scholarship in Theory of Metal Hydrides, Sweden: Physics and Astronomy

The Division of Materials theory is known to have a world-class research environment in ab-initio computational research on materials properties. Besides the usage of existing state-of-the-art computational codes, a perpetual development of new methods and computational techniques is done in this department.

The Ph. D. student will work on theory of metal hydrides, both metallic multilayers and bulk systems. In addition to structural aspects and phase stability, the dynamical properties of hydrogen will be investigated by combining ab-initio theory with kinetic Monte Carlo simulations. The research task is the theory part of a cross-disciplinary project which also involves experimental physics and chemistry.

The applicant is expected to have a Masters degree in Physics, or equivalent, with a good background in solid-state physics. The application should include a statement of research interest, CV, certificates of exams, degrees and grades, a copy of Master thesis, published article or relevant materials, if available. Also, letter(s) of recommendation should be included.

Scholarship Application Deadline: 1 April, 2011

Further Scholarship Information and Application